PART |
Description |
Maker |
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
SK30GH12306 SK30GH123 |
IGBT Module IGBT模块 IGBT Module 33 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
FZ1200R12KL4C |
IGBT-Wechselrichter / IGBT-inverter IGBT Power Module
|
eupec GmbH
|
GP1201FSS18 |
Single Switch Low V IGBT Module 1200 A, 1800 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
|
CPU165MM |
IGBT SIP MODULE Short Circuit Rated Fast IGBT
|
IRF[International Rectifier]
|
CPV362MM |
IGBT SIP MODULE Short Circuit Rated Fast IGBT
|
IRF[International Rectifier]
|
DIM800DDM17-A000 |
Dual Switch IGBT Module 800 A, 1700 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd.
|
CPV363M4K |
IGBT IGBT SIP MODULE Short Circuit Rated UltraFast
|
IRF[International Rectifier]
|
APTGF100A120TG |
Phase leg NPT IGBT Power Module 135 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
DIM200PHM33-A000 |
Half Bridge IGBT Module Preliminary Information 200 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|